Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering
نویسندگان
چکیده
منابع مشابه
Band gap engineering of bulk ZrO2 by Ti doping.
It has been experimentally observed that Ti doping of bulk ZrO(2) induces a large red-shift of the optical absorption edge of the material from 5.3 to 4.0 eV [Livraghi et al., J. Phys. Chem. C, 2010, 114, 18553-18558]. In this work, density functional calculations based on the hybrid functional B3LYP show that Ti dopants in the substitutional position to Zr in the tetragonal lattice cause the f...
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ژورنال
عنوان ژورنال: Micromachines
سال: 2020
ISSN: 2072-666X
DOI: 10.3390/mi11121128